Theoretical evidence for efficient p-type doping of GaN using beryllium
نویسندگان
چکیده
منابع مشابه
Evidence for p-type doping of InN.
The first evidence of successful p-type doping of InN is presented. It is shown that InN:Mg films consist of a p-type bulk region with a thin n-type inversion layer at the surface that prevents electrical contact to the bulk. Capacitance-voltage measurements indicate a net concentration of ionized acceptors below the -type surface. Irradiation with 2 MeV He+ ions is used to convert the bulk of ...
متن کاملFirst-principles studies of beryllium doping of GaN
The structural and electronic properties of beryllium substitutional acceptors and interstitial donors in GaN are investigated using first-principles calculations based on pseudopotentials and density-functional theory. In p-type GaN, Be interstitials, which act as donors, have formation energies comparable to that of substitutional Be on the Ga site, which is an acceptor. In thermodynamic equi...
متن کاملEnhancement of p-type doping of ZnSe using a modified „N¿Te...d -doping technique
Delta doping techniques have been investigated to enhance the p-type doping of ZnSe. Tellurium was used as a codopant for improving the nitrogen doping efficiency. The net acceptor concentration (NA2ND) increased to 1.5310 18 cm using single d doping of N and Te ~N1Te!, while it was limited to 8310 cm by d doping of N alone. A promising approach was developed in which three consecutive d-doped ...
متن کاملHigh p-type doping of ZnBeSe using a modified delta-doping technique with N and Te
High crystalline quality ZnBeSe epilayers were grown nearly lattice matched to GaAs ~001! substrates by molecular beam epitaxy with a Be–Zn co-irradiation. A ~132! reflection high energy electron diffraction pattern was observed after the Be–Zn co-irradiation of the GaAs ~234! surface. A high p-type doping level of 1.5310 cm was achieved for ~N1Te! triple-delta doping ~d doping! of ZnBeSe epila...
متن کاملp-type doping of GaInNAs quaternary alloys
a r t i c l e i n f o a b s t r a c t Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random Ga 1−x In x N 1− y As y quaternary alloys. We show that the Mg Ga substitution is a better choice than Zn Ga to realize the p-type doping because of the lower transition energy level and lower formation energy. The natur...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1997
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.118766